Tip-induced band bending and its effect on local barrier height measurement studied by light-modulated scanning tunneling spectroscopy

被引：17

作者：

Yoshida, Shoji ^{[1
]}

Kikuchi, Junichi ^{[1
]}

Kanitani, Yuya ^{[1
]}

Takeuchi, Osamu ^{[1
]}

Oigawa, Haruhiro ^{[1
]}

Shigekawa, Hidemi ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, COE, CREST JST, Tsukuba, Ibaraki 3058573, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2006年 / 4卷 / 192-196期

关键词：

Scanning Tunneling Microscopy; Si(001); local barrier height; surface photovoltage; tip-induced band bending;

D O I：

10.1380/ejssnt.2006.192

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Local barrier height (LBH) of Si(001) surface was studied using light-modulated scanning tunneling spectroscopy (LM-STS), which enables the observation of the tip-sample-dependent LBH with or without photoillumination simultaneously. The bias voltage and tip-sample distance dependence of LBH were comprehensively understood by the tip-induced band bending (TIBB), which influences the scanning tunneling microscopy and spectroscopy (STM/STS) in measurement of the local electronic structures of semiconductors. A marked decrease in surface photovoltage caused by photocarrier tunneling at shorter tip-sample distance was also shown. On the basis of these results, a method to measure LBH free of TIBB is discussed.

引用

页码：192 / 196

页数：5

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