ATOM-ASSEMBLED AND CLUSTER-ASSEMBLED INTERFACES - CR GROWTH ON BI2SR2-XCA1+XCU2O8+Y

被引：8

作者：

OHNO, TR ^{[1
]}

PATRIN, JC ^{[1
]}

MEYER, HM ^{[1
]}

WEAVER, JH ^{[1
]}

KIMACHI, Y ^{[1
]}

HIDAKA, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.41.11677

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray photoemission results for Cr interaction on single-crystal Bi2Sr2-xCa1+xCu2O8+y demonstrate that interfaces nearly free of disruption can be formed by atom deposition at 20 K or by cluster assembly. For atom deposition at 20 K, a uniform metallic layer forms with only a slight reduction of Cu2+ bonding configurations, similar to that observed for nonreactive overlayers. This atom-assembled interface was stable when warmed to 300 K. Cluster assembly results in modification of the exposed Bi-O plane, but the Cu 2p3/2 emission shows no significant change because there was no change in Cu-O bonding. The irregular but complete layer of Cr on Bi2Sr2-xCa1+xCu2O8+y formed by cluster assembly exhibited limited reaction upon warming to 300 K. In contrast, interface formation at 300 K by atom deposition produced complete reduction of Cu2+-like bonding within 3050 of the surface. These results demonstrate the competition between kinetic and thermodynamic processes. © 1990 The American Physical Society.

引用

页码：11677 / 11680

页数：4

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