ANODIC OXIDE-FILMS ON HG1-XCDXTE

被引:58
作者
NEMIROVSKY, Y
FINKMAN, E
机构
[1] Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa
关键词
anodic oxide; II-VI compounds; mercury cadmium telluride; native oxide;
D O I
10.1149/1.2129135
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The formation of native oxides on Hg1-xCdxTe (x = 0.205) by anodic oxidation in 0.1M KOH in methanol and in solutions of 90% ethylene glycol-10% buffered aqueous solutions with pH varying from 6 to 10 is described. The anodic oxide films are characterized by optical properties such as refractive index and bandgap; electrical properties such as dielectric constant at room temperature and at 77°K and specific resistivity; and chemical properties such as their reactivity in various solvents. It is shown that the predominant constituent of the native oxide is TeO2. © 1979, The Electrochemical Society, Inc. All rights reserved.
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页码:768 / 770
页数:3
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