GAS-PHASE COMPOSITION IN THE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE

被引:25
作者
TOBIN, PJ
PRICE, JB
CAMPBELL, LM
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关键词
D O I
10.1149/1.2129379
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2222 / 2227
页数:6
相关论文
共 17 条
[1]  
ALBERTI RA, 1978, Patent No. 4098923
[2]  
BROWN HL, 1978, SOLID STATE TECHNOL, V21, P35
[3]  
DUSHMAN S, 1962, SCI F VACUUM TECHNIQ, P82
[4]   The oxidation of the silicon hydrides. Part II [J].
Emeleus, HJ ;
Stewart, K .
JOURNAL OF THE CHEMICAL SOCIETY, 1936, :677-684
[5]   The oxidation of the silicon hydrides. Part I. [J].
Emeleus, HJ ;
Stewart, K .
JOURNAL OF THE CHEMICAL SOCIETY, 1935, :1182-1189
[6]  
FRIMA H, 1978, EL SOC EXT ABSTR, P704
[7]  
HAMMOND ML, 1976, 501 TEMPR MICR EL SE
[8]  
HOCHBERG AK, 1978, EL SOC EXT ABST 1015, P592
[9]  
HOLLAHAN J, 1978, P APPLIED MATERIALS
[10]  
KERN W, 1976, RCA REV, V37, P3