STUDY OF POLARIZATION PHENOMENON IN LEAD SILICATE GLASS USING MGOS STRUCTURE

被引：7

作者：

SINGH, BR ^{[1
]}

机构：

[1] BANARAS HINDU UNIV,DEPT PHYS,VARANASI 5,INDIA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1974年 / 7卷 / 03期

关键词：

D O I：

10.1088/0022-3727/7/3/311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：443 / 450

页数：8

共 14 条

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[9] TRANSPORT OF SODIUM IONS IN SILICON DIOXIDE FILMS USING MOS STRUCTURE [J].

SINGH, BR ;

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RAI, SS .

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[10] EFFECT OF TEMPERATURE ON M-O-S CAPACITANCES [J].

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