REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF THE GASB SURFACE DURING MOLECULAR-BEAM EPITAXY

被引：16

作者：

YANO, M

YAMAMOTO, K

UTATSU, T

INOUE, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface stoichiometry of GaSb during molecular beam epitaxy is studied b\ using the reflection high-energy electron diffraction technique. This study has shown a desorption energy of 1.47 eV for excessively absorbed Sb atoms on the Sb-stabilized surface. It is also shown that the Ga-stabilized surface easily dissociates Ga atoms from the Sb sublayer to aggregate fine droplets. The activation energy is found to be 1.76 eV for the Ga droplet formation.

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页码：1133 / 1135

页数：3

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