MOBILITY OF DISLOCATIONS IN GERMANIUM AND SILICON

被引：48

作者：

GOMEZ, AM ^{[1
]}

HIRSCH, PB ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 36卷 / 01期

关键词：

D O I：

10.1080/00318087708244455

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：169 / 179

页数：11

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