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[1]
YANAI H, 1968, 7 INT C MICR OPT GEN
OBSERVATION OF CURRENT AND VOLTAGE WAVEFORMS OF SI IMPATT DIODE
被引：8
作者：
TORIZUKA, H
YANAI, H
机构：
[1] Dept. of Electronic Engrg. University of Tokyo, Bunkyo-ku, Tokyo
关键词：
D O I：
10.1109/PROC.1969.6973
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
Current and voltage waveforms of the Si IMPATT diode were observed directly by means of the oscillating circuit using microstrip line. The results indicate that the conventional small-signal theory cannot be applied to the observed type of oscillation. The oscillation starts at the bias voltage just above the breakdown voltage of the diode; then along with its buildup, the bias voltage is lowered owing to the auto-bias efect to reach a steady value considerably below the breakdown voltage. Large amplitude oscillation of high efficiency is expected over a wide frequency range. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：349 / &
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