HOMOGENEOUS IMPURITY INCORPORATION DURING CRYSTAL GROWTH FROM MELT

被引：6

作者：

WITT, AF

GATOS, HC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 04期

关键词：

D O I：

10.1149/1.2411933

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：511 / &

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[3] IMPURITY DISTRIBUTION IN SINGLE CRYSTALS .4. GROWTH CHARACTERISTICS AND IMPURITY INCORPORATION DURING FACET GROWTH [J].

MORIZANE, K ;

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[4] STUDY OF IMPURITY HETEROGENEITIES IN INSB BY MEANS OF A PERMANGANATE ETCHANT [J].

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