INFLUENCE OF THE ROUGHNESS PROFILE ON THE SPECULAR REFLECTIVITY OF X-RAYS AND NEUTRONS

被引:125
作者
DEBOER, DKG
机构
[1] Philips Research Laboratories, 5656 AA Eindhoven
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 09期
关键词
D O I
10.1103/PhysRevB.49.5817
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For the calculation of specular x-ray and neutron reflectivity from rough surfaces two expressions exist, which are valid under different circumstances. Another expression is derived using the second-order distorted-wave Born approximation, which smoothly connects the two existing expressions. The shape of the reflectivity curve depends not only on the average roughness, but also on the lateral correlation of the roughness profile.
引用
收藏
页码:5817 / 5820
页数:4
相关论文
共 18 条
[1]  
Beckmann P., 1963, SCATTERING ELECTROMA
[2]   UTILIZATION OF SPECULAR X-RAY REFLECTION, DIFFUSE X-RAY REFLECTION OR PLANAR X-RAY REFLECTION TO STUDY THIN-FILMS OR SURFACES [J].
CROCE, P ;
NEVOT, L .
REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (01) :113-125
[3]   GLANCING-INCIDENCE X-RAY-FLUORESCENCE OF LAYERED MATERIALS [J].
DEBOER, DKG .
PHYSICAL REVIEW B, 1991, 44 (02) :498-511
[4]  
EASTMAN JM, 1978, PHYS THIN FILMS, V10, P167
[5]   THEORY OF INELASTIC-SCATTERING OF SLOW ELECTRONS BY LONG-WAVELENGTH SURFACE OPTICAL PHONONS [J].
EVANS, E ;
MILLS, DL .
PHYSICAL REVIEW B, 1972, 5 (10) :4126-&
[6]  
Mandelbrot B. B., 1982, FRACTAL GEOMETRY NAT, P1
[7]   SCATTERING AND ABSORPTION OF ELECTROMAGNETIC RADIATION BY A SEMI-INFINITE MEDIUM IN PRESENCE OF SURFACE-ROUGHNESS [J].
MARADUDIN, AA ;
MILLS, DL .
PHYSICAL REVIEW B, 1975, 11 (04) :1392-1415
[8]   INELASTIC-SCATTERING OF NEUTRONS BY SURFACE SPIN-WAVES ON FERROMAGNETS [J].
MAZUR, P ;
MILLS, DL .
PHYSICAL REVIEW B, 1982, 26 (09) :5175-5186
[9]   THEORY OF RAMAN EFFECT IN METALS [J].
MILLS, DL ;
MARADUDI.AA ;
BURSTEIN, E .
ANNALS OF PHYSICS, 1970, 56 (02) :504-&
[10]   CHARACTERIZATION OF SURFACES BY GRAZING X-RAY REFLECTION - APPLICATION TO STUDY OF POLISHING OF SOME SILICATE-GLASSES [J].
NEVOT, L ;
CROCE, P .
REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03) :761-779