MAGNESIUM AND ZINC ION-IMPLANTATION INTO SULFUR-DOPED GAP

被引：9

作者：

INADA, T ^{[1
]}

OHNUKI, Y ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,KOGANEI,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 04期

关键词：

D O I：

10.1063/1.1655451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：228 / 230

页数：3

共 8 条

[1] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].

CASEY, HC ;

ERMANIS, F ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+

[2] ZINC ION-IMPLANTATION OF SULFUR-DOPED GAP [J].

HEMENGER, PM ;

DOBBS, BC .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :462-464

[3] MG AND BE ION IMPLANTED GAAS [J].

HUNSPERGER, RG ;

JAMBA, DM ;

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1318-+

[4] ANNEALING STUDY OF ION-IMPLANTED SILICON BY PHOTOELECTROMAGNETIC METHOD [J].

INADA, T ;

NISHIMURA, H ;

OHNUKI, Y .

APPLIED PHYSICS LETTERS, 1972, 21 (04) :137-+

[5] TEMPERATURE DEPENDENCE OF RHS IN ALUMINUM-IMPLANTED LAYER IN N-TYPE SINGLE CRYSTAL SILICON [J].

ITOH, T ;

INADA, T ;

ISHIKI, M ;

MENABE, K .

APPLIED PHYSICS LETTERS, 1969, 14 (09) :255-&

[6]

LADANY I, 1972, RCA REV, V33, P517

[7] P-TYPE DOPANTS FOR GAP GREEN LIGHT EMITTING DIODES [J].

LORIMOR, OG ;

WEINER, ME .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (11) :1576-&

[8]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

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