CORE-LEVEL PHOTOEMISSION OF CS-O ADLAYER OF NEA GAAS CATHODES

被引：39

作者：

SPICER, WE

LINDAU, I

SU, CY

CHYE, PW

PIANETTA, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 11期

关键词：

D O I：

10.1063/1.90223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：934 / 935

页数：2

共 16 条

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BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :580-+

[7] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J].

JAMES, LW ;

UEBBING, JJ .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :370-&

[8]

JAMES LW, 1970, J APPL PHYS, V41, P4505

[9] DETERMINATION OF OXYGEN BINDING-SITE ON GAAS(110) USING SOFT-X-RAY-PHOTOEMISSION SPECTROSCOPY [J].

PIANETTA, P ;

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SPICER, WE .

PHYSICAL REVIEW LETTERS, 1975, 35 (20) :1356-1359

[10] OXIDATION PROPERTIES OF GAAS (110) SURFACES [J].

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LINDAU, I ;

GARNER, CM ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1166-1169

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