THIN-FILM IN-DOPED V-CATALYZED SNO2 GAS SENSORS

被引:25
作者
LOW, H [1 ]
SULZ, G [1 ]
LACHER, M [1 ]
KUHNER, G [1 ]
UPTMOOR, G [1 ]
REITER, H [1 ]
STEINER, K [1 ]
机构
[1] FRAUNHOFER INST PHYS MESSTECH,W-7800 FREIBURG,GERMANY
关键词
D O I
10.1016/0925-4005(92)80219-N
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Thin-film In-doped V-catalysed SnO2 gas sensors are discussed and compared with Pt-catalysed In-doped or undoped SnO2 gas sensors. The In acceptors are implanted, while the catalysts are directly evaporated onto the active sensor layer. The V/In catalyst/dopant combination leads to thin-film sensors highly sensitive to NO2, while nearly no cross sensitivity to CO, CO2, H-2 and CH4 is detectable. The maximum conductivity change of the V-catalyst In-doped SnO2 sensor in NO2-enriched synthetic air occurs at about 200-degrees-C.
引用
收藏
页码:215 / 219
页数:5
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