CMOS RESISTIVE FUSES FOR IMAGE SMOOTHING AND SEGMENTATION

被引:32
作者
YU, PC
DECKER, SJ
LEE, HS
SODINI, CG
WYATT, JL
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
[2] MIT,MICROSYST TECHNOL LAB,CAMBRIDGE,MA 02139
基金
美国国家科学基金会;
关键词
D O I
10.1109/4.126542
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A two-terminal nonlinear element called a resistive fuse is described. Its application in image smoothing and segmentation is explained. Two types of CMOS resistive fuses were designed, fabricated, and tested. The first implementation employs four depletion-mode NMOS and PMOS transistors, occupying a minimum area of 30-mu-m x 38-mu-m. The second implementation uses 7 or 11 standard enhancement-mode transistors on an area of 75-mu-m x 100-mu-m or less. Individual resistive-fuse circuits have been fabricated and tested and their functionality has been demonstrated. A one-dimensional network of 35 resistive fuses using the 11-transistor implementation was also fabricated in a standard CMOS process. Experimental results indicate that the network is capable of smoothing out small variations in image intensity while preserving the edges of objects.
引用
收藏
页码:545 / 553
页数:9
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