ON THE NATURE OF THE DEFECT PASSIVATION IN POLYCRYSTALLINE SILICON BY HYDROGEN AND OXYGEN PLASMA TREATMENTS

被引：9

作者：

NICKEL, NH

MEI, P

BOYCE, JB

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA.

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 08期

关键词：

D O I：

10.1109/16.398672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of hydrogen and oxygen plasmas on the properties of polycrystalline silicon films and thin-film transistors are investigated. The results clearly demonstrate that an oxygen plasma does not passivate grain boundary defects. However, an oxygen plasma treatment at 300 K still improves the electrical properties of thin-film transistors.

引用

页码：1559 / 1560

页数：2

共 8 条

[1]

CHERN HN, 1993, IEEE T ELECTRON DEV, V40, P2301, DOI 10.1109/16.249479

[2]

GHANDI SK, 1983, VLSI FABRICATION PRI, pCH9

[3] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS [J].