GAAS FILMS GROWN BY VACUUM CHEMICAL EPITAXY USING THERMALLY PRECRACKED TRIMETHYL-ARSENIC

被引：16

作者：

FRAAS, LM ^{[1
]}

MCLEOD, PS ^{[1
]}

WEISS, RE ^{[1
]}

PARTAIN, LD ^{[1
]}

CAPE, JA ^{[1
]}

机构：

[1] CHEVRON RES CO,RICHMOND,CA 94802

来源：

关键词：

D O I：

10.1063/1.339145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：299 / 301

页数：3

共 6 条

[1] BRECKENRIDGE C, 1983, UNPUB SOC TOXICOLOGY
[2] EPITAXIAL-GROWTH FROM ORGANOMETALLIC SOURCES IN HIGH-VACUUM
FRAAS, LM
MCLEOD, PS
PARTAIN, LD
CAPE, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 22 - 29
[3] SITTING M, 1981, HDB TOXIC HAZARDOUS, P61
[4] THE GROWTH OF GAAS, ALGAAS, INP AND INGAAS BY CHEMICAL BEAM EPITAXY USING GROUP-III AND GROUP-V ALKYLS
TSANG, WT
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (04) : 235 - 245
[5] 1986, ORGANOMETALLICS LIT, P69
[6] 1946, PB158508