STUDIES OF BORON ON THE ARSENIC SITE IN ELECTRON-IRRADIATED GAAS

被引：6

作者：

MOORE, WJ

HAWKINS, RL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 12期

关键词：

D O I：

10.1063/1.340306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5699 / 5702

页数：4

共 14 条

[1] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[2] PHASE CORRECTION IN FT-IR [J].

CHASE, DB .

APPLIED SPECTROSCOPY, 1982, 36 (03) :240-244

[3] INFRARED-ABSORPTION AND PHOTOLUMINESCENCE OF DEFECT LEVELS IN THE 204-MEV TO 255-MEV RANGE IN P-TYPE GAAS [J].

FISCHER, DW ;

YU, PW .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :1952-1955

[4]

Frank W., 1984, DIFFUSION CRYSTALLIN, P63

[5]

GLEDHILL GA, 1986, UNPUB

[6] CARBON IN SEMI-INSULATING, LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HUNTER, AT ;

KIMURA, H ;

BAUKUS, JP ;

WINSTON, HV ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :74-76

[7] USE OF POLYPROPYLENE FILM FOR INFRARED CRYOGENIC WINDOWS [J].

LABRIE, D ;

BOOTH, IJ ;

THEWALT, MLW ;

CLAYMAN, BP .

APPLIED OPTICS, 1986, 25 (02) :171-172

[8]

LAITHWAITE K, 1977, I PHYS C SER A, V33, P133

[9] PROPERTIES OF THE 78 MEV ACCEPTOR IN GAAS [J].

MOORE, WJ ;

HAWKINS, RL ;

SHANABROOK, BV .

PHYSICA B & C, 1987, 146 (1-2) :65-74

[10] INFRARED-ABSORPTION STUDIES OF THE BORON B(2) CENTER IN GAAS [J].

MOORE, WJ ;

SHANABROOK, BV ;

KENNEDY, TA .

SOLID STATE COMMUNICATIONS, 1985, 53 (11) :957-960

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