LI-DOPED ZNSE EPITAXIAL LAYERS BY ION-IMPLANTATION

被引：27

作者：

YODO, T

YAMASHITA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2403 / 2405

页数：3

共 19 条

[11] GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

STUTIUS, W .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :1-9

[12] VOID FORMATION IN ANNEALED N+-IMPLANTED ZNSE [J].

VERMAAK, JS ;

PETRUZZELLO, J .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :1215-1217

[13] SHALLOW N-ACCEPTOR IN N+-IMPLANTED ZNSE [J].

WU, ZL ;

MERZ, JL ;

WERKHOVEN, CJ ;

FITZPATRICK, BJ ;

BHARGAVA, RN .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :345-346

[14] PHOSPHORUS ACCEPTOR LEVELS IN ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

YAO, T ;

OKADA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (06) :821-827

[15] METALORGANIC VAPOR-PHASE EPITAXY OF LOW-RESISTIVITY P-TYPE ZNSE [J].

YASUDA, T ;

MITSUISHI, I ;

KUKIMOTO, H .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :57-59

[16] EFFECT OF HEAT-TREATMENT ON THE CRYSTALLINE QUALITY OF ZNSE EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

YODO, T ;

YAMASHITA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05) :L903-L905

[17] EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON GAAS SUBSTRATE BY ATMOSPHERIC-PRESSURE MOVPE USING DIMETHYLZINC AND HYDROGEN SELENIDE [J].

YODO, T ;

OKA, H ;

KOYAMA, T ;

YAMASHITA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05) :L561-L563

[18]

YODO T, IN PRESS J CRYST GRO

[19] PHOTOLUMINESCENCE PROPERTIES OF LI-DOPED ZNSE FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

YOSHIKAWA, A ;

MUTO, S ;

YAMAGA, S ;

KASAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L260-L262

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