SITE-SELECTIVE DOPING OF COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION OF RADIOACTIVE NUCLEI

被引：51

作者：

WEYER, G

PETERSEN, JW

DAMGAARD, S

NIELSEN, HL

HEINEMEIER, J

机构：

[1] CERN,DIV EP,CH-1211 GENEVA 23,SWITZERLAND

[2] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

来源：

关键词：

D O I：

10.1103/PhysRevLett.44.155

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：155 / 157

页数：3

共 7 条

[1]

HOLM NE, 1979, 1978 P INT C DEF RAD, P573

[2] NEW TECHNIQUES AT ISOLDE-2 [J].

RAVN, HL ;

CARRAZ, LC ;

DENIMAL, J ;

KUGLER, E ;

SKARESTAD, M ;

SUNDELL, S ;

WESTGAARD, L .

NUCLEAR INSTRUMENTS & METHODS, 1976, 139 (DEC15) :267-273

[3]

SURRIDGE RK, 1977, 1976 P INT C GALL AR, P161

WALTER, JP ;

COHEN, ML .

PHYSICAL REVIEW B, 1971, 4 (06) :1877-&

[5]

Weyer G., 1975, Hyperfine Interactions, V1, P93, DOI 10.1007/BF01022445

[6]

WEYER G, UNPUBLISHED

[7]

WEYER G, 1971, MOSSBAUER EFFECT MET, V6