THM GROWTH AND PROPERTIES OF CUINSE2 SINGLE-CRYSTALS

被引：36

作者：

MIYAKE, H

SUGIYAMA, K

机构：

[1] Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 125卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90295-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth of bulk CuInSe2 Single crystals by the traveling heater method (THM) using In solvent has been investigated. The THM growth was performed at about 750-degrees-C, where the CuInSe2 crystals with chalcopyrite structure grow without solid state phase transformation at 810-degrees-C, and where the In solution of CuInSe2 is a single liquid phase. The obtained ingots have a stoichiometric composition of CuInSe2 throughout the entire crystal. The as-grown crystals are of n-type conductivity, and have an emission band peaking at 0.95 eV in photoluminescence spectra at 77 K.

引用

页码：548 / 552

页数：5

共 22 条

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