HIGHLY ANISOTROPIC ROOM-TEMPERATURE SUB-HALF-MICRON SI REACTIVE ION ETCHING USING FLUORINE ONLY CONTAINING GASES

被引：30

作者：

GOGOLIDES, E

GRIGOROPOULOS, S

NASSIOPOULOS, AG

机构：

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00143-I

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon reactive ion etching using a mixture of SF6 and CHF3 at room temperature was investigated. The etching characteristics as a function of gas composition, rf power, pressure and masking material as well as electrode material were studied. Highly anisotropic, vertical and with smooth surface silicon pillars, lines and trenches with aspect ratios as high as 25:1 with dimensions down to 50 nm were obtained.

引用

页码：449 / 452

页数：4

共 12 条

[1]

Stern, Madeiros, Deep three-dimensional microstructure fabrication for infrared binary optics, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10, 6, pp. 2520-2525, (1992)

[2]

Canham, App. Phys. Lett., 57, (1990)

[3]

Tachi, Tsujimoto, Okudaira, Appl. Phys. Lett., 52, 8, (1988)

[4]

Sayau, Baliga, Hamaker, Reactive Ion Etching of Silicon Trenches Using SF[sub 6]∕O[sub 2] Gas Mixtures, Journal of The Electrochemical Society, 138, 10, pp. 3076-3081, (1991)

[5]

Yunkin, Fischer, Voges, Microelec. Eng., 23, pp. 373-376, (1994)

[6]

Tseng, Lin, Waddell, High-Rate Anisotropic Etching of Silicon by Remote Microwave Plasma in Sulfur-Hexafluoride, Journal of The Electrochemical Society, 137, 8, pp. 2612-2618, (1990)

[7]

Tin, Lin, Tseng, J. Electrochem. Soc., 138, 10, pp. 3094-3100, (1991)

[8]

Musson, Sze, Reinhard, Asmussen, Anisotropic etching of submicron silicon features in a 23 cm diameter microwave multicusp electron-cyclotron-resonance plasma reactor, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 9, 6, pp. 3521-3525, (1991)

[9]

Gogolides, Tzevelekis, Tsoi, Goethals, Baik, Van Roey, Hatzakis, J. Vac. Sci. Technol. B, (1994)

[10]

van der Drift, Zijlstra, Cheung, Werners, Radelaar, Microelec. Eng., 23, (1994)

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