学术探索
学术期刊
新闻热点
数据分析
智能评审

STUDY ON THE STABILITY OF A COPPER PHTHALOCYANINE LANGMUIR-BLODGETT-FILM GAS-SENSITIVE ELEMENT

被引：17
作者：
LU, AD
ZHANG, LG
JIANG, DP
LI, YJ
FAN, Y
机构：
[1] Changchum Institute of Physics, Academia Sinica, Changchum 130021
来源：
THIN SOLID FILMS | 1994年 / 244卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(94)90609-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The stability of an asymmetrically substituted copper phthalocyanine (AsyCuPc) Langmuir-Blodgett (LB) film gas-sensitive element which showed good selective sensitivity to NH3 in air was inspected by an aging test on the device. The reasons leading to the change in response characteristic with time are discussed. It is indicated that the change in gas-sensing response of the AsyCuPc LB film probably arises from the variation in film structure due to the influence of some external factor such as environmental temperature and vibration.
引用
收藏
页码：955 / 957
页数：3
相关论文
共 9 条
[1]   PHTHALOCYANINE LANGMUIR BLODGETT-FILM GAS DETECTOR [J].
BAKER, S ;
ROBERTS, GG ;
PETTY, MC .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (05) :260-263
[2]  
DOUGLAS JP, 1990, Patent No. 9005160
[3]   INTERACTION BETWEEN COPPER TETRA-4(2,4-DITERT-AMYLPHENOXY)PHTHALOCYANINE LANGMUIR-BLODGETT FIMS AS A GAS-SENSITIVE SENSOR AND NH3 [J].
JIANG, DP ;
LU, AD ;
LI, YJ ;
PANG, XM ;
HUA, YL .
THIN SOLID FILMS, 1991, 199 (01) :173-179
[4]  
KO WH, 1990, SENS MATER, V2, P39
[5]  
LIN YG, 1992, CHIN J APPL CHEM, V9, P69
[6]   THE EFFECT OF FILM-FORMING CONDITIONS FOR TAPCUPC LANGMUIR-BLODGETT-FILMS ON MORPHOLOGY AND PROPERTIES [J].
LU, AD ;
PANG, XM ;
LI, YJ ;
JIANG, DP ;
HUA, YL ;
CHEN, WQ ;
ZHOU, EL .
THIN SOLID FILMS, 1991, 196 (02) :323-328
[7]  
LU AD, 1992, THIN SOLID FILMS, V210, P602
[8]   POSSIBLE APPLICATIONS FOR LANGMUIR-BLODGETT-FILMS [J].
PETTY, MC .
THIN SOLID FILMS, 1992, 210 (1-2) :417-426
[9]   A VAPOR-SENSITIVE CHEMIRESISTOR FABRICATED WITH PLANAR MICROELECTRODES AND A LANGMUIR-BLODGETT ORGANIC SEMICONDUCTOR FILM [J].
WOHLTJEN, H ;
BARGER, WR ;
SNOW, AW ;
JARVIS, NL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1170-1174
1