A NEW SELF-ALIGNED ALGAAS GAAS HBT BASED ON REFRACTORY EMITTER AND BASE ELECTRODES

被引：17

作者：

NITTONO, T

NAGATA, K

NAKAJIMA, O

ISHIBASHI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 11期

关键词：

D O I：

10.1109/55.43118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：506 / 507

页数：2

共 12 条

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[2] SUBMICROMETER FULLY SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :246-248

[3] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J].

ISHIBASHI, T ;

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[4]

Ishii K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P274

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ITO, H ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (04) :L707-L709

[6] THERMAL-STABILITY OF TUNGSTEN OHMIC CONTACTS TO THE GRADED-GAP INGAAS/GAAS/ALGAAS HETEROSTRUCTURE [J].

LAHAV, A ;

REN, F ;

KOPF, RF .

APPLIED PHYSICS LETTERS, 1989, 54 (17) :1693-1695

[7] SELF-ALIGNED ALGAAS/GAAS HBT WITH LOW EMITTER RESISTANCE UTILIZING INGAAS CAP LAYER [J].

NAGATA, K ;

NAKAJIMA, O ;

YAMAUCHI, Y ;

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ITO, H ;

ISHIBASHI, T .

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[8]

NAKAJIMA O, 1989, IN PRESS P GAAS RELA

[9] NON-ALLOYED OHMIC CONTACTS TO N-GAAS USING COMPOSITIONALLY GRADED INXGA1-XAS LAYERS [J].

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ITO, H ;

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ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (09) :1718-1722

[10] SYMMETRICAL-GAIN, ZERO-OFFSET, SELF-ALIGNED, AND REFRACTORY-CONTACT DOUBLE HBTS [J].

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