DUAL ELECTRON INJECTOR STRUCTURE

被引：12

作者：

DIMARIA, DJ

DONG, DW

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 01期

关键词：

D O I：

10.1063/1.91701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：61 / 64

页数：4

相关论文

共 5 条

[1] GRADED OR STEPPED ENERGY BAND-GAP-INSULATOR MIS STRUCTURES (GI-MIS OR SI-MIS) [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5826-5829

[2] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[3]

DIMARIA DJ, J APPL PHYS

[4] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].

DONG, D ;

IRENE, EA ;

YOUNG, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :819-823

[5] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+