NEARLY DAMAGE-FREE DRY-ETCHING OF ALGAINP/GAINP BY ELECTRON-CYCLOTRON-RESONANCE TECHNIQUE

被引：7

作者：

HOMMEL, J

SCHNEIDER, F

MOSER, M

GENG, C

SCHOLZ, F

SCHWEIZER, H

机构：

[1] 4. Physikalisches Institut, Universität Stuttgart, D-70569 Stuttgart

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

Damage free dry etching - Electron cyclotron resonance technique - Photoluminescence spectroscopy;

D O I：

10.1016/0167-9317(94)90170-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nearly damage-free dry etching process in the material system AlGaInP/GaInP is demonstrated. An electron cyclotron resonance (ECR) ion source has been used for plasma excitation. Photoluminescence spectroscopy at varying excitation power densities and sample temperatures is used to measure the degree of damage.

引用

页码：349 / 352

页数：4