HIGH-PRESSURE CRYSTALLIZATION OF III-V NITRIDES

Crystal growth from the solution under high Nz pressure (HNP method) results in high quality mm size crystals of GaN in 5 to 24 hour process. The crystallization of AlN is less efficient due to relatively lower solubility of nitrogen in the liquid Al. Possibility of InN-growth is strongly limited since this compound is unstable at T > 600 degrees C even at 20 kbar. The growth of cm size high quality GaN crystals requires lower supersaturations and longer processes.