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LOW PRESSURE SPUTTERING SYSTEM OF MAGNETRON TYPE
被引:41
作者
:
WASA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Wireless Research Laboratory, Matsushita Electric Industrial Company, Limited, Kadoma, Osaka
WASA, K
HAYAKAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Wireless Research Laboratory, Matsushita Electric Industrial Company, Limited, Kadoma, Osaka
HAYAKAWA, S
机构
:
[1]
Wireless Research Laboratory, Matsushita Electric Industrial Company, Limited, Kadoma, Osaka
来源
:
REVIEW OF SCIENTIFIC INSTRUMENTS
|
1969年
/ 40卷
/ 05期
关键词
:
D O I
:
10.1063/1.1684039
中图分类号
:
TH7 [仪器、仪表];
学科分类号
:
0804 ;
080401 ;
081102 ;
摘要
:
A new design of a low pressure sputtering system of magnetron type is described. The optimum sputtering conditions are discussed in relation to the system. It is shown that this system is able to produce uniform thin films with good reproducibility, and especially to produce a metal oxide film by reactive sputtering. Some typical configurations are presented for use in the laboratory and on a production scale. © 1969 The American Institute of Physics.
引用
收藏
页码:693 / &
相关论文
共 12 条
[11]
INSTABILITY OF ROTATING ELECTRON SHEATH IN CROSSED FIELD DEVICE
[J].
WASA, K
论文数:
0
引用数:
0
h-index:
0
WASA, K
;
HAYAKAWA, S
论文数:
0
引用数:
0
h-index:
0
HAYAKAWA, S
.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1965,
20
(07)
:1219
-&
[12]
WASA K, 1967, IEEE T PTS MATERIALS, VPMP3, P71
←
1
2
→
共 12 条
[11]
INSTABILITY OF ROTATING ELECTRON SHEATH IN CROSSED FIELD DEVICE
[J].
WASA, K
论文数:
0
引用数:
0
h-index:
0
WASA, K
;
HAYAKAWA, S
论文数:
0
引用数:
0
h-index:
0
HAYAKAWA, S
.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1965,
20
(07)
:1219
-&
[12]
WASA K, 1967, IEEE T PTS MATERIALS, VPMP3, P71
←
1
2
→