EPITAXIAL-GROWTH OF TELLURIUM BY ELECTRODEPOSITION

被引：6

作者：

QIU, CX

SHIH, I

机构：

来源：

MATERIALS LETTERS | 1989年 / 8卷 / 08期

关键词：

D O I：

10.1016/0167-577X(89)90173-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：309 / 312

页数：4

共 7 条

[1]

Adler E. L., 1982, 1982 Ultrasonics Symposium Proceedings, P430, DOI 10.1109/ULTSYM.1982.197863

[2]

PAUBAIX M, 1974, ATLAS ELECTROCHEMICA

[3] ELECTRICAL PORPERTIES OF TE-SI HETEROJUNCTIONS [J].

SHARMA, BL ;

NAUTIYAL, MM ;

MUKERJEE, SN .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1972, 32 (03) :315-&

[4] CZOCHRALSKI GROWTH OF TELLURIUM SINGLE-CRYSTALS [J].

SHIH, I ;

CHAMPNESS, CH .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) :492-498

[5] PRELIMINARY-RESULTS OF A TE/SI HETEROSTRUCTURE [J].

SHIH, I ;

DESPINS, C ;

CHAMPNESS, CH ;

GUNDJIAN, AA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (05) :2004-2006

[6] AUTOEPITAXY OF TELLURIUM USING VACUUM DEPOSITION [J].

SHIH, I ;

CHAMPNESS, CH ;

SEWELL, PB ;

DING, L .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :523-528

[7] PHOTOCONDUCTIVITY IN TELLURIUM AT 77-K [J].

SHIH, I ;

CHAMPNESS, CH .

INFRARED PHYSICS, 1981, 21 (05) :311-322

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