MODEL FOR EXCESS NOISE OF SEMICONDUCTING BASRTIO3

被引：3

作者：

AMBROZY, A

机构：

[1] Department of Electronics Technology, Technical University of Budapest, Budapest

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 09期

关键词：

D O I：

10.1109/T-ED.1979.19610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements on semiconducting BaSrTiO3 showed that this material exhibits a high 1/f excess noise. The model described here attributes this high excess noise to grain boundaries. The small volume and the depletion of the contact spots may justify the noise levels observed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1368 / 1369

页数：2

共 8 条

[1] EXCESS NOISE IN SEMICONDUCTING BASRTIO3 [J].