ETCH PIT STUDY OF DIFFERENT CRYSTALLOGRAPHIC FACES OF L-ARGININE PHOSPHATE (LAP)

被引：6

作者：

RAO, SM

BATRA, AK

CAO, C

LAL, RB

机构：

[1] Department of Physics, Alabama A and M University, Normal, AL 35762

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 2-3期

基金：

美国国家航空航天局;

关键词：

Etching - Optical Materials;

D O I：

10.1016/0022-0248(90)90095-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Etch pit studies have been made on different crystallographic faces of LAP single crystals. A new etchant has been developed which produces reproducible and good quality pits. The observed etch pits reveal the symmetry of different faces and the etching action somewhat depends upon the relative abundance of the various faces in the crystals grown from aqueous solution. © 1990.

引用

页码：481 / 482

页数：2