APPLICATION OF THE RAPID THERMAL-PROCESS - SINTERING THE SPUTTERED ALUMINUM SILICON CONTACT IN SILICON DETECTOR FABRICATION

Rapid thermal process (RTP) sintering of aluminium metalization has been used in p+-n junction detector fabrication. For the same thickness of aluminum film and at the same RTP sintering condition, the leakage current of the p+-n junction detectors with sputtered Al metalization showed at least a 50% improvement after sintering and no spiking phenomena were observed compared to the detectors with evaporated Al contacts. RTP sintering in 4 % H2/N2 ambient passivates the defects introduced by sputtering and the damage caused by the Co-60 irradiation.