CHEMICAL COMPOSITION AND ELECTRICAL PROPERTIES OF TIN OXIDE-FILMS PREPARED BY VAPOR-DEPOSITION

被引：86

作者：

ABOAF, JA

MARCOTTE, VC

CHOU, NJ

机构：

[1] IBM CORP,E FISHKILL FAC,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533

[2] IBM CORP,THOMAS WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1149/1.2403539

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：701 / 702

页数：2

共 9 条

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[4] SASAKI H, 1966, MAY P EL COMP IEEE, P79
[5] DEVITRIFICATION OF TIN OXIDE FILMS (DOPED AND UNDOPED) PREPARED BY REACTIVE SPUTTERING
SINCLAIR, WR
PETERS, FG
STILLING.DW
KOONCE, SE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) : 1096 - &
[6] NATURE OF SEMICONDUCTIVITY IN POLYCRYSTALLINE TIN OXIDE
VINCENT, CA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 515 - &
[7] VOROBEVA OV, 1971, IJV AKAD NAUK USSR, V7, P206
[8] VOSSEN JL, 1969, SEP S SPUTT VAC SOC
[9] WRIGHT DA, 1968, P BRIT CERAMIC SOC, V10, P103