LAYER THICKNESSES IN OXYGEN IMPLANTATION OF SILICON

被引：10

作者：

DOUGLASHAMILTON, DH ^{[1
]}

DOLAN, RP ^{[1
]}

FRIEDMAN, HE ^{[1
]}

机构：

[1] EATON CORP,DIV ION BEAM SYST,BEVERLY,MA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90817-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：158 / 162

页数：5

相关论文

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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 324 - 327
[2] GIBBONS JF, 1975, PROJECTED RANGE STAT
[3] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS
SIGMUND, P
[J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +
[4] ZIEGLER JF, 1985, COMMUNICATION