PREPARATION OF MICRON THICK SPECIMENS FOR HIGH-PRESSURE STUDY

被引:1
作者
GUPTA, MC [1 ]
RUOFF, AL [1 ]
机构
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
关键词
D O I
10.1063/1.1135650
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The electrical resistance behavior of a material under very high pressure can be studied by pressing the material with a diamond indentor against a diamond flat. The high pressures generated can be calculated using Hertz's theory provided the material thickness is about a micron or less. Here we describe a method of preparing micron thick specimens of a few millimeters in size. We have prepared micron thick specimens of a few millimeters in size of Si (100), Si (111), NaCl (100). The result of high pressure study on Si (100) is also presented.
引用
收藏
页码:135 / 137
页数:3
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