MONOLITHIC INTEGRATION OF PSEUDOMORPHIC POWER AND LOW-NOISE HEMTS

被引:1
作者
SAUNIER, P
TSERNG, HQ
SHIH, HD
BRADSHAW, K
机构
关键词
D O I
10.1049/el:19890397
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:583 / 584
页数:2
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[2]   A DOUBLE-HETEROJUNCTION DOPED-CHANNEL PSEUDOMORPHIC POWER HEMT WITH A POWER-DENSITY OF 0.85 W/MM AT 55 GHZ [J].
SAUNIER, P ;
MATYI, RJ ;
BRADSHAW, K .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :397-398
[3]  
SAUNIER P, UNPUB COMMUNICATION
[4]  
WISSEMAN WR, 1987, MICROWAVE J SEP, P167