ELECTRONIC-STRUCTURE AND JUMPING MAGNETIZATION OF QUANTUM-WELLS IN TILTED MAGNETIC-FIELDS

The energy spectrum, the density of states, the electron probability distributions and the magnetization of a Ga1-xAlxAs-GaAs-Ga1-xAlxAs quantum well in strong tilted magnetic fields B = (Bx,0,Bz) are calculated. It is shown that the spectrum and the probability densities of the states bound in the quantum well would change little if the coupling Hamiltonian congruent-to BxBz were to be neglected. Localized states appear above the barrier edge. The magnetization parallel to the layer interfaces exhibits oscillations and sharp jumps as a function of the chemical potential. It remains to be seen whether these jumps may serve as the basis for a dissipation free switching device.