CONTACT-LIMITED CONDUCTION IN V2O5 SINGLE-CRYSTALS

被引：4

作者：

LANYI, S

机构：

[1] Institute of Physics, Slovak Academy of Sciences

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 54卷 / 01期

关键词：

D O I：

10.1002/pssa.2210540104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of V2O5 single crystal–electrode interfaces are investigated. It is shown, that Au, Ag, Ti, Ga, and Al form blocking contacts with an approximately reverse dependence of the barrier height on the work function of metals as expected for Schottky barriers on n‐type semiconductors. The phenomenon can be explained by downward bending of the polaron band, caused by injection of electrons from the less noble metals. This gives rise to a surface layer, in which either space charge limited conduction in presence of traps or more probably a Poole‐Frenkel‐type conduction occurs. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：37 / 43

页数：7

共 24 条

[1]

Abdullaev A. A., 1969, Kristallografiya, V14, P1095

[2] STRUCTURE AND PHYSICAL PROPERTIES OF SOLID AND LIQUID VANADIUM PENTOXIDE [J].