OPTICAL-EMISSION SPECTROSCOPY OF PLASMA-ETCHING OF GAAS AND INP

被引:3
作者
LAW, VJ
JONES, GAC
RITCHIE, DA
TEWORDT, M
机构
[1] Cavendish Laboratory, University of Cambridge, Cambridge, CB3 OHE, Madingley Road
关键词
Analysis - Beam plasma interactions - Emission spectroscopy - Integrated circuit manufacture - Ion beam lithography - Lithography - Microelectronic processing - Plasma interactions - Printed circuits - Semiconductor device manufacture;
D O I
10.1016/0167-9317(93)90086-K
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes optical emission spectroscopy between 260 - 800 nm for ClCH3/H-2 rf-plasma reactive ion etching of Al0.3Ga0.7As, GaAs and InP compound semiconductors. The optical emission species identified for GaAs and InP etching are: Ga, GaCl, In, InCl and diatomic P2 (A1PI(g)-X1SIGMA(u)+) and P2+ (C2PI-X2PI) lines. Under the plasma condition used here and allowing for the stoichiometry of the etch species, it is found that the ratio of emission intensity is SIGMA(In/P) almost-equal-to 1.4. Taken together with the disparity between In and P2 vapour pressures, these results suggest that the initial rate of Indium desorption is a factor 1.4 greater than that of phosphorus, suggesting a near-surface P-enriched surface.
引用
收藏
页码:337 / 340
页数:4
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