SHORT-TERM ANNEALING IN ELECTRON-IRRADIATED P-TYPE SILICON

被引：15

作者：

SROUR, JR

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 06期

关键词：

D O I：

10.1109/TNS.1970.4325777

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：118 / +

页数：1

共 9 条

[1] RAPID ANNEALING IN N-TYPE SILICON FOLLOWING PULSED 10 MEV ELECTRON IRRADIATION [J].

ARIMURA, I ;

FREEMAN, RR .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2570-+

[2] RAPID ANNEALING IN SILICON TRANSISTORS [J].

BINDER, D ;

BUTCHER, DT ;

CREPPS, JR ;

HAMMER, EL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :84-+

[3]

CORELLI JC, 1966, IEEE T NUCL SCI, VNS13, P70

[4] INJECTION-STIMULATED VACANCY REORDERING IN P-TYPE SILICON AT 76DEGREESK [J].

GREGORY, BL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3765-&

[5] INJECTION DEPENDENCE OF TRANSIENT ANNEALING IN NEUTRON-IRRADIATED SILICON DEVICES [J].

GREGORY, BL ;

SANDER, HH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :116-+

[6] TRANSIENT ANNEALING IN SEMICONDUCTOR DEVICES FOLLOWING PULSED NEUTRON IRRADIATION [J].

SANDER, HH ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :53-+

[7] SHORT-TERM ANNEALING IN 14-MEV NEUTRON-IRRADIATED SILICON [J].

SROUR, JR ;

CURTIS, OL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4082-+

[8] ELECTRICAL PROPERTIES OF NEUTRON-IRRADIATED SILICON AT 76 DEGREES K - HALL EFFECT AND ELECTRICAL CONDUCTIVITY [J].

STEIN, HJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :69-+

[9]

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