EVALUATION OF AMORPHOUS (MO, TA, W)-SI-N DIFFUSION-BARRIERS FOR [SI]/CU METALLIZATIONS

被引：168

作者：

REID, JS ^{[1
]}

KOLAWA, E ^{[1
]}

RUIZ, RP ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

THIN SOLID FILMS | 1993年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90689-M

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous binary M(=Mo, Ta or W)-Si and ternary M-Si-N, r.f.-sputtered from M,Si, and WSi2, targets, are assessed as diffusion barriers between silicon substrates and copper overlayers. By I(V) tests of the metallizations on n(+)p shallow junction diodes, the ternary M-Si-N barriers prevent copper from reaching the silicon at 800 degrees C or higher during a 30 min heat treatment in vacuum. Failure of the metallizations correlates with the crystallization temperature of the barrier, which is presumably a prelude to fast grain-boundary diffusion. Metal-rich Mo-Si-N and W-Si-N barriers liberate nitrogen during annealing, which poses a limitation to their crystallization temperatures. No reaction products of copper with metal-rich M-Si or M-Si-N barriers are observed, which is in agreement with our recent thermodynamic modelling of the M-Si-Cu ternary systems.

引用

页码：319 / 324

页数：6

共 17 条

[1]

AFFOLTER K, 1985, MATERIALS RES SOC S, V47, P167

[2] TA AS A BARRIER FOR THE CU/PTSI,CU/SI, AND AL/PTSI STRUCTURES [J].