ROLE OF SURFACE TRAPPING IN PHOTOVOLTAGE SPECTROSCOPY

被引：12

作者：

LAGOWSKI, J

GATOS, HC

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW,POLAND

[2] MIT,DEPT MET & MAT SCI,CAMBRIDGE,MA 02139

来源：

SURFACE SCIENCE | 1973年 / 38卷 / 01期

关键词：

D O I：

10.1016/0039-6028(73)90291-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：252 / 256

页数：5

共 8 条

[1]

GATOS HC, IN PRESS

[2] DETERMINATION OF SURFACE STATE PARAMETERS FROM SURFACE PHOTOVOLTAGE TRANSIENTS - CDS [J].

LAGOWSKI, J ;

BALESTRA, CL ;

GATOS, HC .

SURFACE SCIENCE, 1972, 29 (01) :203-&

[3] ELECTRONIC CHARACTERISTICS OF REAL CDS SURFACES [J].

LAGOWSKI, J ;

GATOS, HC ;

BALESTRA, CL .

SURFACE SCIENCE, 1972, 29 (01) :213-&

[4] PHOTOVOLTAGE INVERSION EFFECT RESULTING FROM A CONTINUOUS SPECTRUM OF SURFACE STATES - ZNO [J].

LAGOWSKI, J ;

SPROLES, ES ;

GATOS, HC .

SURFACE SCIENCE, 1972, 30 (03) :653-&

[5] PHOTOVOLTAGE INVERSION EFFECT AND ITS APPLICATION TO SEMICONDUCTOR SURFACE STUDIES - CDS [J].

LAGOWSKI, J ;

BALESTRA, CL ;

GATOS, HC .

SURFACE SCIENCE, 1971, 27 (03) :547-&

[6] SURFACE PIEZOELECTRIC EFFECT IN NON-CENTROSYMMETRIC SEMICONDUCTORS - CDS [J].

LAGOWSKI, J ;

GATOS, HC .

SURFACE SCIENCE, 1972, 30 (02) :491-&

[7]

LAGOWSKI J, UNPUBLISHED RESULTS

[8]

LAGOWSKI J, 1972, P INT C SEMICONDUCTO, P1462

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