THEORETICAL STUDY OF HIGH-FREQUENCY PERFORMANCE OF A SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR FABRICATED ON A HIGH-RESISTIVITY SUBSTRATE

被引：2

作者：

ALLEY, GD

TALLEY, HE

机构：

[1] UNIV KANSAS,DEPT ELECT ENGN,LAWRENCE,KS

[2] BELL TEL LABS INC,N ANDOVER,MA 01845

来源：

关键词：

D O I：

10.1109/TMTT.1974.1128200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：183 / 189

页数：7

共 13 条

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[2] ALLEY GD, 1973, IEEE GMTT INT MICROW
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SOMMERHA.R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 82 - &
[4] HAUSER JR, 1965, IEEE T ELECTRON DEVI, VED12, P605
[5] JAGGI R, 1969, HELV PHYS ACTA, V42
[6] Keller HerbertB., 2018, NUMERICAL METHODS 2
[7] 2-DIMENSIONAL ANALYSIS OF JFET STRUCTURES CONTAINING A LOW-CONDUCTIVITY SUBSTRATE
KENNEDY, DP
OBRIEN, RR
[J]. ELECTRONICS LETTERS, 1971, 7 (24) : 714 - &
[8] KIM CK, 1970, IEEE T ELECTRON DEV, VED17, P120
[9] 2-DIMENSIONAL ANALYSIS OF SUBSTRATE EFFECTS IN JUNCTION FETS
REISER, M
[J]. ELECTRONICS LETTERS, 1970, 6 (16) : 493 - &
[10] REISER M, 1973, IEEE T ELECTRON DEVI, VED20, P35