THE INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE OPTICAL-PROPERTIES OF ION-ASSISTED REACTIVELY EVAPORATED VANADIUM-OXIDE THIN-FILMS

被引:16
作者
CASE, FC
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 03期
关键词
D O I
10.1116/1.575229
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:2010 / 2014
页数:5
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共 20 条
[1]   CONTAMINATION ANALYSIS OF TIO2 THIN-FILMS DEPOSITED USING ION ASSISTED DEPOSITION [J].
ALJUMAILY, GA ;
WILSON, SR ;
BARRON, AC ;
MCNEIL, JR ;
DOYLE, BL .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :906-909
[2]   INFLUENCE OF ION-BEAM PARAMETERS ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ION-ASSISTED REACTIVELY EVAPORATED VANADIUM DIOXIDE THIN-FILMS [J].
CASE, FC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1762-1766
[3]   MODIFICATIONS IN THE PHASE-TRANSITION PROPERTIES OF PREDEPOSITED VO-2 FILMS [J].
CASE, FC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (04) :1509-1512
[4]   SIMPLE RESISTANCE MODEL FIT TO THE OXIDATION OF A VANADIUM FILM INTO VO2 [J].
CASE, FC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (01) :123-127
[5]   ALGEBRAIC-METHOD FOR EXTRACTING THIN-FILM OPTICAL-PARAMETERS FROM SPECTROPHOTOMETER MEASUREMENTS [J].
CASE, WE .
APPLIED OPTICS, 1983, 22 (12) :1832-1836
[6]  
CHAMBERLAND BL, 1970, Patent No. 3542697
[7]   EFFECTS OF VARIOUS DOPING ELEMENTS ON TRANSITION TEMPERATURE OF VANADIUM OXIDE SEMICONDUCTORS [J].
FUTAKI, H ;
AOKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (08) :1008-&
[8]   2 COMPONENTS OF CRYSTALLOGRAPHIC TRANSITION IN VO2 [J].
GOODENOUGH, JB .
JOURNAL OF SOLID STATE CHEMISTRY, 1971, 3 (04) :490-+
[9]  
HARPER JME, 1984, ION BOMBARDMENT MODI, P127
[10]   ELECTRICAL AND MAGNETIC PROPERTIES OF V1-XWXO2, O'= X '=0.060 [J].
HORLIN, T ;
NIKLEWSKI, T ;
NYGREN, M .
MATERIALS RESEARCH BULLETIN, 1972, 7 (12) :1515-1524