ROLE OF POINT-LIKE AND EXTENDED DEFECTS IN MOS PROCESSING

被引：7

作者：

BALDI, L

CEROFOLINI, G

FERLA, G

机构：

[1] Direzione Tecnica, Divisione MOS, SGS-ATES, 20041 Agrate, Milano

来源：

SURFACE TECHNOLOGY | 1979年 / 8卷 / 02期

关键词：

D O I：

10.1016/0376-4583(79)90060-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of point-like and extended defects on MOS devices is discussed. Our analysis considers only a particular class of devices, random access memories (RAMs), since these involve the major difficulties. Point-like defects are usually removed by a suitable gettering technique, with care being taken not to introduce further extended defects in addition to the ones already present on the silicon slice. An extensive analysis of the electrically active defectivity of commercially available silicon wafers is reported and the influence of defectivity on RAM yield is discussed. © 1979.

引用

页码：161 / 170

页数：10

共 9 条

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