CHARACTERIZATION OF PIEZOELECTRIC PROPERTIES OF ZINC-OXIDE THIN-FILMS DEPOSITED ON SILICON FOR SENSORS APPLICATIONS

被引：49

作者：

DESCHANVRES, JL ^{[1
]}

REY, P ^{[1
]}

DELABOUGLISE, G ^{[1
]}

LABEAU, M ^{[1
]}

JOUBERT, JC ^{[1
]}

PEUZIN, JC ^{[1
]}

机构：

[1] CEN,CEA,LETI 85X,F-38041 GRENOBLE,FRANCE

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 33卷 / 1-2期

关键词：

D O I：

10.1016/0924-4247(92)80223-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the piezoelectric properties of zinc oxide thin films deposited on silicon wafers by a modified CVD technique based on the pyrolysis of an ultrasonic-generated aerosol. The aerosol was obtained from an organic solvent containing dissolved organometallic precursors. Direct measurement of the piezoelectric effect, as well as electromechanical resonance observations, were achieved on small beams. The coupling factor, k, of the layers reached a value of 0.09, which is comparable with the single crystal value.

引用

页码：43 / 45

页数：3