VAPOR-PHASE GROWTH OF TE-DOPED GASB

被引:9
作者
KITAMURA, N
KAKEHI, M
SHEN, J
WADA, T
机构
关键词
D O I
10.1143/JJAP.20.995
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:995 / 996
页数:2
相关论文
共 8 条
[1]   SHEET RESISTIVITY OF EPITAXIALLY GROWN GERMANIUM LAYER [J].
ARIZUMI, T ;
NISHINAGA, T ;
KAKEHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) :468-+
[2]   EPITAXIAL VAPOR GROWTH OF GALLIUM ANTIMONIDE [J].
ARIZUMI, T ;
KAKEHI, M ;
SHIMOKAWA, R .
JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :151-+
[3]   GROWTH AND ELECTRICAL-PROPERTIES OF SPUTTER-DEPOSITED SINGLE-CRYSTAL GASB FILMS ON GAAS SUBSTRATES [J].
ELTOUKHY, AH ;
GREENE, JE .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6396-6405
[4]   VAPOR-PHASE GROWTH OF GAXAL1-XSB [J].
KITAMURA, N ;
KAKEHI, M ;
WADA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (04) :739-740
[5]   A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB [J].
MIYAZAWA, S ;
KONDO, S ;
NAGANUMA, M .
JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :670-674
[6]   GROWTH OF P-TYPE GALLIUM ANTIMONIDE SINGLE-CRYSTALS BY A TEMPERATURE-GRADIENT TRANSPORT TECHNIQUE [J].
RADO, WG ;
CRAWLEY, RL .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1316-&
[7]   GASB PREPARED FROM NONSTOICHIOMETRIC MELTS [J].
REID, FJ ;
BAXTER, RD ;
MILLER, SE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :713-&
[8]  
van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1