PREPARATION AND CHARACTERIZATION OF THE GA DOPED BI-SR-CA-CU-O SYSTEM

被引：12

作者：

DIMESSO, L

MATSUBARA, I

OGURA, T

FUNAHASHI, R

YAMASHITA, H

TAMPIERI, A

机构：

[1] OSAKA NATL RES INST,IKEDA,OSAKA 563,JAPAN

[2] CNR,CERAM TECHNOL RES INST,I-48018 FAENZA,ITALY

来源：

PHYSICA C | 1994年 / 227卷 / 3-4期

关键词：

D O I：

10.1016/0921-4534(94)90084-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The preparation and the characterization of the 2212 phase in the Bi2Sr1.7CaGaCu2-xOy system prepared by a solid-state reaction is reported. The dependence of the thermal, structural and superconducting properties on the Ga content is discussed. XRD data and SEM-EDX observations revealed the presence of Bi-Sr-Ca-Ga complex oxides in the Ga richer compounds. The electrical and magnetic measurements showed a single step as well as a broadening of the transitions width at an increase of the Ga content. The higher critical current density value (3.8 x 10(6) A cm-2 at 5 K for H = 2 kOe and 5.3 X 10(6) A cm-2 at 5 K for H = 2 kOe for x = 0 and x = 0.8, respectively) found in the Ga doped sample has been explained as a direct consequence of a stronger pinning due to the presence of the Ga containing complex oxides.

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页码：291 / 299

页数：9

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