OPTICAL CHARACTERIZATION OF PURE ZNSE EPILAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：9

作者：

CHERGUI, A

VALENTA, J

LOISON, JL

ROBINO, M

PELANT, I

GRUN, JB

LEVY, R

BRIOT, O

AULOMBARD, RL

机构：

[1] UNIV MONTPELLIER 2,CNRS,URA 357,ETUD SEMICOND GRP,F-34095 MONTPELLIER 5,FRANCE

[2] CHARLES UNIV,FAC MATH & PHYS,CR-12116 PRAGUE 2,CZECH REPUBLIC

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 11期

关键词：

D O I：

10.1088/0268-1242/9/11/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different ZnSe/GaAs epilayers prepared by low-pressure metal organic vapour-phase epitaxy under the conditions given by Nurmikko and Gunshor (1993 Physica B 185 16) are studied through their low-temperature transmission, reflection and photoluminescence spectra. Several samples are etched out from their GaAs substrate and the properties of as-grown surfaces and etched surfaces are compared. The etched samples seem to be free of in-plane strain and to behave like bulk ZnSe. The free-exciton excited state (n = 2) is clearly observed in transmission, reflection and luminescence spectra. We also studied the thermal quenching of the photoluminescence in order to confirm the origin of some bound-exciton centres.

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页码：2073 / 2079

页数：7

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