ELECTRICAL AND STRUCTURAL-PROPERTIES OF TANTALUM NITRIDE THIN-FILMS DEPOSITED BY SPUTTERING

被引：13

作者：

PETROVIC, R

NENADOVIC, T

KRALJEVIC, N

DIMITRIJEVIC, T

机构：

来源：

THIN SOLID FILMS | 1979年 / 57卷 / 02期

关键词：

D O I：

10.1016/0040-6090(79)90174-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tantalum nitride films were deposited by a sputtering technique and the variations in the resistivity and the temperature coefficient of resistance (TCR) with nitrogen partial pressure were observed. The influence of film thickness on these properties was examined for thickness in the range 70-4000 Å. Resistivities of approximately 230 μΩ cm and TCRs from -50 to -75 ppm °C-1 were found for the plateau region. These electrical properties are compared with the results of structural investigations of the tantalum nitride films. © 1979.

引用

页码：333 / 336

页数：4