A STUDY OF VACANCY-TYPE DEFECTS IN B+-IMPLANTED SIO2/SI BY A SLOW POSITRON BEAM

被引：46

作者：

UEDONO, A

TANIGAWA, S

SUGIURA, J

OGASAWARA, M

机构：

[1] UNIV TSUKUBA,INST MAT SCI,SAKURA,IBARAKI 305,JAPAN

[2] HITACHI LTD,CTR DEVICE DEV,OME,TOKYO 198,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.1293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1293 / 1297

页数：5

共 21 条

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